Display apparatus and method of manufacturing the same

ABSTRACT

A display apparatus includes: a base substrate; a thin film transistor and a power supply wire on the base substrate; a first electrode on the base substrate, and electrically connected to the thin film transistor; a light emitting layer and a common layer on the first electrode; and a second electrode on the common layer. The power supply wire includes: a first conductive layer; a second conductive layer on the first conductive layer; and a third conductive layer on the second conductive layer. The third conductive layer protrudes more than the second conductive layer on a side surface of the power supply wire, and the second electrode contacts a side surface of the second conductive layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. patent application Ser. No.17/079,278, filed Oct. 23, 2020, which claims priority to and thebenefit of Korean Patent Application No. 10-2019-0179168, filed Dec. 31,2019, the entire content of both of which is incorporated herein byreference.

BACKGROUND 1. Field

Aspects of example embodiments of the present disclosure relategenerally to a display apparatus, and a method of manufacturing thedisplay apparatus. More particularly, aspects of example embodiments ofthe present disclosure relate to a display apparatus with improveddisplay quality, and a method of manufacturing the display apparatus.

2. Description of the Related Art

Recently, as display technology improves, display products havingsmaller sizes, lighter weights, and superior performance have beenproduced. Cathode ray tube (CRT) televisions have been widely used fordisplay apparatuses with many desirable characteristics in terms ofperformance and price. Recently, however, a display apparatus such as aplasma display apparatus, a liquid crystal display apparatus, and anorganic light emitting diode display apparatus that overcomes weakpoints of the CRT in terms of miniaturization and/or portability, andhaving light weight and low power consumption, has been spotlighted.

The organic light emitting diode display apparatus may include a firstelectrode that is an anode electrode, a second electrode that is acathode electrode, and a light emitting layer disposed between the firstand second electrodes. In this case, as the organic light emitting diodedisplay apparatus becomes larger, display quality may deteriorate due toan IR drop of the second electrode.

The above information disclosed in this Background section is forenhancement of understanding of the background of the presentdisclosure, and therefore, it may contain information that does notconstitute prior art.

SUMMARY

One or more example embodiments of the present disclosure are directedto a display apparatus capable of preventing or reducing an IR drop of acathode electrode to improve display quality while reducing amanufacturing cost.

One or more example embodiments of the present disclosure are directedto a method of manufacturing the display apparatus.

According to one or more example embodiments of the present disclosure,a display apparatus includes: a base substrate; a thin film transistorand a power supply wire on the base substrate; a first electrode on thebase substrate, and electrically connected to the thin film transistor;a light emitting layer and a common layer on the first electrode; and asecond electrode on the common layer. The power supply wire includes: afirst conductive layer; a second conductive layer on the firstconductive layer; and a third conductive layer on the second conductivelayer. The third conductive layer protrudes more than the secondconductive layer on a side surface of the power supply wire, and thesecond electrode contacts a side surface of the second conductive layer.

In some embodiments, the common layer may contact the side surface ofthe second conductive layer.

In some embodiments, a first cover part including a same material asthat of the common layer may be on the third conductive layer of thepower supply wire, a second cover part including a same material as thatof the second electrode may be on the first cover part which may be onthe third conductive layer, and the second cover part on the thirdconductive layer may be spaced from the second electrode which may beconnected to the side surface of the second conductive layer.

In some embodiments, the common layer may include a hole injection layerand a hole transport layer between the first electrode and the lightemitting layer, and an electron transport layer and an electroninjection layer between the light emitting layer and the secondelectrode.

In some embodiments, the display apparatus may further include: a lowerblocking electrode between the base substrate and the thin filmtransistor, and the lower blocking electrode and the power supply wiremay be at a same layer.

In some embodiments, the thin film transistor may include a gateelectrode, and the power supply wire may be at a same layer as that ofthe gate electrode.

In some embodiments, the power supply wire may extend in a firstdirection from a display area for displaying an image to a peripheralarea, the peripheral area being a non-display area adjacent to thedisplay area.

In some embodiments, the side surface of the second conductive layer ofthe power supply wire may include a first side surface and a second sidesurface opposite to the first side surface, and when measured in alength direction crossing a width direction of the power supply wire ina cross section extending through the first side surface and the secondside surface, a contact length of a portion of the second electrodecontacting the first side surface of the second conductive layer may begreater than a contact length of a portion of the second electrodecontacting the second side surface of the second conductive layer.

In some embodiments, the power supply wire may extend in a firstdirection, the power supply wire may include a contact part protrudingin a second direction crossing the first direction, and the secondelectrode may contact the side surface of the second conductive layer inthe contact part.

In some embodiments, the contact part may have a semi-circular shape ina plan view.

In some embodiments, the second conductive layer of the power supplywire may include aluminum or copper.

According to one or more example embodiments of the present disclosure,a display apparatus includes: a base substrate; a first electrode on thebase substrate; a common layer on the first electrode; a secondelectrode on the common layer; and a power supply wire on the basesubstrate. The power supply wire includes a recessed part at a sidesurface of the power supply wire in a longitudinal sectional view of thepower supply wire, and the second electrode contacts the side surface ofthe power supply wire at the recessed part of the power supply wire.

In some embodiments, the common layer may contact the side surface ofthe power supply wire.

According to one or more example embodiments of the present disclosure,a method of manufacturing a display apparatus, includes: sequentiallyforming a first conductive layer, a second conductive layer, and a thirdconductive layer on a base substrate; forming a power supply wire bypatterning the third conductive layer, the second conductive layer, andthe first conductive layer; forming a via insulating layer on the basesubstrate on which the power supply wire is formed; forming a firstelectrode on the via insulating layer; forming a common layer on thebase substrate on which the first electrode is formed; and forming asecond electrode on the common layer. The third conductive layerprotrudes more than the second conductive layer at a side surface of thepower supply wire, and when the second electrode is formed, the secondelectrode contacts a side surface of the second conductive layer.

In some embodiments, the first conductive layer may include titanium,the second conductive layer may include aluminum, and the thirdconductive layer may include titanium, and when the power supply wire isformed, the first to third conductive layers may be patterned throughdry etching to form an undercut.

In some embodiments, the first conductive layer may include titanium,the second conductive layer may include aluminum, and the thirdconductive layer may include titanium, and when the first electrode isformed, the first electrode may be patterned through wet etching, and aportion of the second conductive layer may be etched to form an undercutat side surfaces of the third conductive layer and the second conductivelayer.

In some embodiments, the first conductive layer may include titanium,the second conductive layer may include copper, and the third conductivelayer may include titanium, and when the power supply wire is formed,the first to third conductive layers may be patterned through wetetching to form an undercut at side surfaces of the third conductivelayer and the second conductive layer.

In some embodiments, when the second electrode is formed, the secondelectrode may be formed by depositing a conductive material in adirection inclined at an angle with respect to a direction perpendicularto the base substrate.

In some embodiments, the common layer may contact the side surface ofthe second conductive layer.

In some embodiments, the common layer may include a hole injectionlayer, a hole transport layer, an electron transport layer, and anelectron injection layer, and the method may further include forming alight emitting layer on the hole transport layer to overlap with thefirst electrode before forming the electron transport layer of thecommon layer.

A display apparatus according to one or more example embodiments of thepresent disclosure may include a base substrate, and a thin filmtransistor and a power supply wire, which may be disposed on the basesubstrate. A first electrode may be disposed on the base substrate, andmay be electrically connected to the thin film transistor. A lightemitting layer and a common layer may be disposed on the firstelectrode, and a second electrode may be disposed on the common layer.The power supply wire may include a first conductive layer, a secondconductive layer disposed on the first conductive layer, and a thirdconductive layer disposed on the second conductive layer. The thirdconductive layer may protrude more than a side surface of the secondconductive layer to form an undercut. The second electrode may contact(e.g., directly contact) the side surface of the second conductivelayer. Accordingly, in the display apparatus, the power supply wire,which may be an auxiliary wire, may be connected to the second electrodewithout a separate laser drilling process or a separate photo-processusing a mask, so that a display apparatus capable of preventing orreducing the IR drop while reducing manufacturing costs, and having asimplified structure may be provided.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects and features of the present disclosure willbecome more apparent to those skilled in the art from the followingdetailed description of the example embodiments with reference to theaccompanying drawings

FIG. 1 is a plan view showing a display apparatus according to one ormore example embodiments.

FIG. 2 is a cross-sectional view showing a display area of the displayapparatus of FIG. 1 .

FIG. 3 is an enlarged view of the portion ‘A’ shown in the displayapparatus of FIG. 2 .

FIG. 4 is an enlarged view showing a stacked structure of a lightemitting structure of the display apparatus of FIG. 2 .

FIG. 5 is a cross-sectional view showing a display area of a displayapparatus according to one or more example embodiments.

FIG. 6 is a cross-sectional view showing a display area of a displayapparatus according to one or more example embodiments.

FIG. 7 is an enlarged view showing a power supply wire of a displayapparatus according to one or more example embodiments.

FIG. 8 is a plan view showing a power supply wire in a display area of adisplay apparatus according to one or more example embodiments.

FIG. 9 is a cross-sectional view taken along the line I-I′ in FIG. 8 .

FIGS. 10A, 10B, 11A, 11B, 12, 13A, 13B, 14A, 14B, 15A, and 15B arecross-sectional views illustrating a method of manufacturing a displayapparatus according to one or more example embodiments.

FIG. 16 is a block diagram illustrating an electronic device accordingto one or more example embodiments.

FIG. 17A is a diagram illustrating an example in which the electronicdevice of FIG. 16 is implemented as a television.

FIG. 17B is a diagram illustrating an example in which the electronicdevice of FIG. 16 is implemented as a smart phone.

DETAILED DESCRIPTION

Hereinafter, example embodiments will be described in more detail withreference to the accompanying drawings, in which like reference numbersrefer to like elements throughout. The present disclosure, however, maybe embodied in various different forms, and should not be construed asbeing limited to only the illustrated embodiments herein. Rather, theseembodiments are provided as examples so that this disclosure will bethorough and complete, and will fully convey the aspects and features ofthe present disclosure to those skilled in the art. Accordingly,processes, elements, and techniques that are not necessary to thosehaving ordinary skill in the art for a complete understanding of theaspects and features of the present disclosure may not be described.Unless otherwise noted, like reference numerals denote like elementsthroughout the attached drawings and the written description, and thus,descriptions thereof may not be repeated.

In the drawings, the relative sizes of elements, layers, and regions maybe exaggerated and/or simplified for clarity. Spatially relative terms,such as “beneath,” “below,” “lower,” “under,” “above,” “upper,” and thelike, may be used herein for ease of explanation to describe one elementor feature's relationship to another element(s) or feature(s) asillustrated in the figures. It will be understood that the spatiallyrelative terms are intended to encompass different orientations of thedevice in use or in operation, in addition to the orientation depictedin the figures. For example, if the device in the figures is turnedover, elements described as “below” or “beneath” or “under” otherelements or features would then be oriented “above” the other elementsor features. Thus, the example terms “below” and “under” can encompassboth an orientation of above and below. The device may be otherwiseoriented (e.g., rotated 90 degrees or at other orientations) and thespatially relative descriptors used herein should be interpretedaccordingly.

It will be understood that, although the terms “first,” “second,”“third,” etc., may be used herein to describe various elements,components, regions, layers and/or sections, these elements, components,regions, layers and/or sections should not be limited by these terms.These terms are used to distinguish one element, component, region,layer or section from another element, component, region, layer orsection. Thus, a first element, component, region, layer or sectiondescribed below could be termed a second element, component, region,layer or section, without departing from the spirit and scope of thepresent disclosure.

It will be understood that when an element or layer is referred to asbeing “on,” “connected to,” or “coupled to” another element or layer, itcan be directly on, connected to, or coupled to the other element orlayer, or one or more intervening elements or layers may be present. Inaddition, it will also be understood that when an element or layer isreferred to as being “between” two elements or layers, it can be theonly element or layer between the two elements or layers, or one or moreintervening elements or layers may also be present.

The terminology used herein is for the purpose of describing particularembodiments and is not intended to be limiting of the presentdisclosure. As used herein, the singular forms “a” and “an” are intendedto include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises,” “comprising,” “includes,” and “including,” “has, ” “have, ”and “having,” when used in this specification, specify the presence ofthe stated features, integers, steps, operations, elements, and/orcomponents, but do not preclude the presence or addition of one or moreother features, integers, steps, operations, elements, components,and/or groups thereof. As used herein, the term “and/or” includes anyand all combinations of one or more of the associated listed items.Expressions such as “at least one of,” when preceding a list ofelements, modify the entire list of elements and do not modify theindividual elements of the list.

As used herein, the term “substantially,” “about,” and similar terms areused as terms of approximation and not as terms of degree, and areintended to account for the inherent variations in measured orcalculated values that would be recognized by those of ordinary skill inthe art. Further, the use of “may” when describing embodiments of thepresent disclosure refers to “one or more embodiments of the presentdisclosure.” As used herein, the terms “use,” “using,” and “used” may beconsidered synonymous with the terms “utilize,” “utilizing,” and“utilized,” respectively.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which the present disclosure belongs. Itwill be further understood that terms, such as those defined in commonlyused dictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art and/orthe present specification, and should not be interpreted in an idealizedor overly formal sense, unless expressly so defined herein.

FIG. 1 is a plan view showing a display apparatus according to one ormore example embodiments.

Referring to FIG. 1 , a display apparatus may include a display area DAand a peripheral area PA.

A plurality of pixels PX for displaying an image may be disposed at(e.g., in or on) the display area DA. The pixels PX may be arranged in amatrix form in a first direction D1 and in a second direction D2crossing (e.g., perpendicular to or substantially perpendicular to) thefirst direction D1. Each of the pixels PX may include a thin filmtransistor and a light emitting structure. The light emitting structuremay include a first electrode electrically connected to the thin filmtransistor, a light emitting layer disposed on the first electrode, anda second electrode disposed on the light emitting layer.

The display apparatus may include a plurality of scan lines SLelectrically connected to the pixels PX to apply a scan signal thereto,and a plurality of data lines DL electrically connected to the pixels PXto apply a data signal thereto.

The display apparatus may further include a plurality of power supplywires VL. The power supply wire VL may extend in the first direction D1,and may be disposed at (e.g., in or on) the display area DA. Althoughonly one power supply wire VL is shown in FIG. 1 , a plurality of powersupply wires VL may be arranged along the second direction D2, and eachof the power supply wires VL may extend in the first direction D1, butthe present disclosure is not limited thereto.

In this case, in order to drive the pixel PX, a first power supplyvoltage ELVDD, a second power supply voltage ELVSS, an initializationvoltage VINT, and/or the like may be applied to the pixel PX. Forexample, the second power supply voltage ELVSS may be applied to thepower supply wire VL.

The peripheral area PA may be a non-display area at (e.g., in or on)which an image is not displayed, and may be adjacent to the display areaDA to surround (e.g., around a periphery of) the display area DA. Adriving circuit for driving the display apparatus and/or an inspectioncircuit for inspecting the display apparatus may be disposed at (e.g.,in or on) the peripheral area PA. For example, the power supply wire VLmay extend in the first direction D1 from the display area DA fordisplaying an image to the peripheral area PA corresponding to thenon-display area adjacent to the display area DA, and may be connectedto a test pad formed at (e.g., in or on) the peripheral area PA.

Generally, when a large organic light emitting diode display apparatus,for example, such as a television, has a front light emitting structure,a display quality may deteriorate due to an IR drop of a secondelectrode, which is a cathode electrode, and an auxiliary wire may beformed in order to prevent or reduce such IR drop. In this case, aseparate laser drilling process, a separate contact hole forming processusing a mask, and/or the like may be additionally performed toelectrically connect the auxiliary wire to the cathode electrode.

According to one or more example embodiments of the present disclosure,the power supply wire VL, which may be the auxiliary wire, may beconnected to the second electrode without performing the separate laserdrilling process or a separate photo-process using a mask, so that adisplay apparatus capable of preventing or reducing the IR drop whilereducing a manufacturing cost, and having a simplified structure may beprovided.

FIG. 2 is a cross-sectional view showing a display area of the displayapparatus of FIG. 1 , FIG. 3 is an enlarged view of the portion ‘A’shown in the display apparatus of FIG. 2 , and FIG. 4 is an enlargedview showing a stacked structure of a light emitting structure of thedisplay apparatus of FIG. 2 .

Referring to FIGS. 1 to 4 , the display apparatus may include a basesubstrate 100, a lower blocking electrode BML, a first insulating layer110, an active pattern ACT, a gate insulating layer 120, a gateelectrode GE, an interlayer insulating layer 130, a source electrode SE,a drain electrode DE, a power supply wire VL, a via insulating layer140, a pixel defining layer PDL, a light emitting structure 180, acommon layer CL, and a thin film encapsulation layer TFE. The lightemitting structure 180 may include a first electrode 181, a lightemitting layer EL, and a second electrode 183.

The base substrate 100 may be formed of a transparent or opaquematerial. For example, the base substrate 100 may include a quartzsubstrate, a synthetic quartz substrate, a calcium fluoride substrate, afluorine-doped quartz substrate (e.g., an F-doped quartz substrate), asoda lime glass substrate, a non-alkali glass substrates, and/or thelike. In some embodiments, the base substrate 100 may be a transparentresin substrate having flexibility. An example of the transparent resinsubstrate that may be used as the base substrate 100 may include apolyimide substrate.

The lower blocking electrode BML may be disposed on the base substrate100. The lower blocking electrode BML may overlap with the activepattern ACT to serve as a protective layer for preventing orsubstantially preventing electrical characteristics of the activepattern ACT configuring a thin film transistor TFT from deteriorating.In more detail, the lower blocking electrode BML may minimize or reducea fluctuation of a threshold voltage of the thin film transistor TFT,which may be caused by an inflow of a laser beam irradiated from a lowerportion of the base substrate 100 onto (e.g., into) the active patternACT of the thin film transistor TFT. The lower blocking electrode BMLmay be formed of a metal having a low light transmittance.

The first insulating layer 110 may be disposed on the base substrate 100on which the lower blocking electrode BML is disposed. For example, thefirst insulating layer 110 may be disposed on the base substrate 100 tocover the lower blocking electrode BML. The first insulating layer 110may prevent or substantially prevent metal atoms and/or impurities fromdiffusing from the base substrate 100 into the active pattern ACT, andmay control a heat transfer rate during a crystallization process forforming the active pattern ACT to obtain a uniform or substantiallyuniform active pattern ACT.

The active pattern ACT of the thin film transistor TFT may be disposedon the buffer layer 110. The active pattern ACT may include amorphoussilicon or polycrystalline silicon. In another embodiment, the activepattern ACT may include an oxide of at least one material selected fromthe group consisting of indium (In), gallium (Ga), stannum (Sn),zirconium (Zr), vanadium (V), hafnium (Hf), cadmium (Cd), germanium(Ge), chromium (Cr), titanium (Ti), and zinc (Zn). The active patternACT may include a drain region and a source region, which are doped withimpurities, and a channel region disposed between the drain region andthe source region.

The gate insulating layer 120 may be disposed on the channel region ofthe active pattern ACT. The gate insulating layer 120 may include aninorganic insulating material, for example, such as a silicon compoundand a metal oxide. The gate insulating layer 120 may include a pluralityof layers.

The gate electrode GE of the thin film transistor TFT may be disposed onthe gate insulating layer 120. The gate electrode GE may be formed byusing a metal, an alloy, a metal nitride, a conductive metal oxide, atransparent conductive material, and/or the like.

The interlayer insulating layer 130 may be disposed on the activepattern ACT on which the gate electrode GE is disposed, and on the firstinsulating layer 110. For example, the interlayer insulating layer 130may cover (e.g., may sufficiently cover) the active pattern ACT and thegate electrode GE on the first insulating layer 110, and may have a flator substantially flat top surface without creating a gap around theactive pattern ACT and the gate electrode GE. In another embodiment, theinterlayer insulating layer 130 may be disposed along a profile of theactive pattern ACT and the gate electrode GE with a uniform orsubstantially uniform thickness to cover the active pattern ACT and thegate electrode GE on the first insulating layer 110. The interlayerinsulating layer 130 may include a plurality of layers.

The source electrode SE and the drain electrode DE of the thin filmtransistor TFT, and the power supply wire VL may be disposed on theinterlayer insulating layer 130. The source electrode SE may beelectrically connected to the source region of the active pattern ACTthrough a contact hole formed through the interlayer insulating layer130. The drain electrode DE may be electrically connected to the drainregion of the active pattern ACT through a contact hole formed throughthe interlayer insulating layer 130. The drain electrode DE may beelectrically connected to the lower blocking electrode BML through acontact hole formed through the interlayer insulating layer 130 and thefirst insulating layer 110.

The source electrode SE, the drain electrode DE, and the power supplywire VL may be formed at (e.g., in or on) the same layer. The powersupply wire VL may include a first conductive layer VL1, a secondconductive layer VL2 disposed on the first conductive layer VL1, and athird conductive layer VL3 disposed on the second conductive layer VL2.

In this case, the third conductive layer VL3 may protrude more than aside surface of the second conductive layer VL2 to form an undercut(e.g., see FIG. 3 ). In other words, when measured from a section of thepower supply wire VL in a width direction of the power supply wire VL, awidth of the second conductive layer VL2 may be less than (e.g., smallerthan) a width of the third conductive layer VL3 and a width of the firstconductive layer VL1. Accordingly, the third conductive layer VL3 mayprotrude more than the second conductive layer VL2 on a side surface ofthe power supply wire VL, so that a recessed part RS may be formed onthe side surface of the power supply wire VL. The undercut may be formedthrough a process of collectively etching and patterning the thirdconductive layer VL3, the second conductive layer VL2, and the firstconductive layer VL1, or through a process of separately etching onlythe side surface of the second conductive layer VL2, and may be formedby taking into consideration that the second conductive layer VL2 mayinclude a different material from those of the first and thirdconductive layers VL1 and VL3.

For example, in an embodiment, the first conductive layer VL1 mayinclude titanium, the second conductive layer VL2 may include aluminum,and the third conductive layer VL3 may include titanium. According toanother embodiment, for example, the first conductive layer VL1 mayinclude titanium, the second conductive layer VL2 may include copper,and the third conductive layer VL3 may include titanium. However, thepresent disclosure is not limited thereto.

The via insulating layer 140 may be disposed on the interlayerinsulating layer 130 on which the source electrode SE, the drainelectrode DE, and the power supply wire VL are disposed. The viainsulating layer 140 may have an opening that exposes the power supplywire VL to allow the power supply wire VL to be electrically connectedto the second electrode 183.

The first electrode 181 may be disposed on the via insulating layer 140.The first electrode 181 may be electrically connected to the thin filmtransistor TFT through a contact hole formed through the via insulatinglayer 140. For example, in some embodiments, the first electrode 181 maybe electrically connected to the drain electrode DE of the thin filmtransistor TFT through the contact hole, but the present disclosure isnot limited thereto.

Depending on a light emitting scheme of the display apparatus, the firstelectrode 181 may be formed by using a reflective material or atransmissive material. For example, the first electrode 181 may includealuminum, an aluminum-containing alloy, aluminum nitride, silver, asilver-containing alloy, tungsten, tungsten nitride, copper, acopper-containing alloy, nickel, chromium, chromium nitride, molybdenum,a molybdenum-containing alloy, titanium, titanium nitride, platinum,tantalum, tantalum nitride, neodymium, scandium, strontium rutheniumoxide, zinc oxide, indium tin oxide, tin oxide, indium oxide, galliumoxide, indium zinc oxide, and/or the like. These materials may be usedalone or in combination with each other. In some example embodiments,the first electrode 181 may have a single-layer structure or amultilayered structure including a metal film, an alloy film, a metalnitride film, a conductive metal oxide film, and/or a transparentconductive material film.

The pixel defining layer PDL may be disposed on the via insulating layer140 on which the first electrode 181 is disposed. The pixel defininglayer PDL may be formed by using an organic material, an inorganicmaterial, and/or the like. For example, the pixel defining layer PDL maybe formed by using a photoresist, a polyacryl-based resin, apolyimide-based resin, an acryl-based resin, a silicone compound, and/orthe like. According to some example embodiments, the pixel defininglayer PDL may be etched to form an opening that partially exposes thefirst electrode 181. An emission area and a non-emission area of thedisplay apparatus may be defined by the opening of the pixel defininglayer PDL. For example, a portion where the opening of the pixeldefining layer PDL is located may correspond to the emission area, andthe non-emission area may correspond to a portion adjacent to theopening of the pixel defining layer PDL.

The common layer CL and the light emitting layer EL may be disposed onthe first electrode 181 exposed through the opening of the pixeldefining layer PDL.

In some example embodiments, the common layer CL may have a multilayeredstructure including a hole injection layer HIL, a hole transport layerHTL, an electron transport layer ETL, an electron injection layer EIL,and/or the like. Other than the light emitting layer EL, the holeinjection layer HIL, the hole transport layer HTL, the electrontransport layer ETL, and the electron injection layer EIL may becommonly formed to correspond to a plurality of pixels. The common layerCL may contact (e.g., directly contact) the side surface of the secondconductive layer VL2 of the power supply wire VL. A first cover part CLaincluding the same material as that of the common layer CL may bedisposed on the third conductive layer VL3.

An organic emission layer of the light emitting layer EL may be formedby using suitable light emitting materials for generating differentcolored lights, for example, such as red light, green light, and bluelight, according to each of the pixels of the display apparatus.According to other example embodiments, the organic emission layer ofthe light emitting layer EL may have a structure in which a plurality oflight emitting materials for implementing different colored lights, forexample, such as red light, green light, and blue light, may be stackedon one another to emit white light. In this case, the above lightemitting structures may be commonly formed to correspond to the pixels,and the pixels may be classified by a color filter layer.

The second electrode 183 may be disposed on the pixel defining layerPDL, the light emitting layer EL, and the common layer CL. Depending onthe light emitting scheme of the display apparatus, the second electrode183 may include a transmissive material or a reflective material. Forexample, the second electrode 183 may include aluminum, analuminum-containing alloy, aluminum nitride, silver, a silver-containingalloy, tungsten, tungsten nitride, copper, a copper-containing alloy,nickel, chromium, chromium nitride, molybdenum, a molybdenum-containingalloy, titanium, titanium nitride, platinum, tantalum, tantalum nitride,neodymium, scandium, strontium ruthenium oxide, zinc oxide, indium tinoxide, tin oxide, indium oxide, gallium oxide, indium zinc oxide, and/orthe like. These materials may be used alone or in combination with eachother. In some example embodiments, the second electrode 183 may have asingle-layer structure or a multilayered structure including a metalfilm, an alloy film, a metal nitride film, a conductive metal oxidefilm, and/or a transparent conductive material film.

The second electrode 183 may contact (e.g., directly contact) the sidesurface of the second conductive layer VL2 of the power supply wire VL.A second cover part 183 a including the same material as that of thesecond electrode 183 may be disposed on the first cover part CLa that isdisposed on the third conductive layer VL3. The second cover part 183 adisposed over the third conductive layer VL3 may be spaced apart fromthe second electrode 183 connected to the side surface of the secondconductive layer VL2.

The thin film encapsulation layer TFE may be disposed on the secondelectrode 183. The thin film encapsulation layer TFE may prevent orsubstantially prevent moisture and/or oxygen from penetrating from anoutside. The thin film encapsulation layer TFE may include at least oneorganic layer and at least one inorganic layer. The at least one organiclayer and the at least one inorganic layer may be alternately stacked onone another. For example, the thin film encapsulation layer TFE mayinclude a first inorganic layer, a second inorganic layer, and anorganic layer disposed between the first inorganic layer and the secondinorganic layer, but the present disclosure is not limited thereto. Inanother embodiment, instead of the thin film encapsulation layer, asealing substrate may be provided to block or substantially blockoutside air and/or moisture from penetrating into the display apparatus.

Generally, a process of forming a contact hole by using laser drillingor forming a contact hole by using a separate mask is performed for acontact between conductive layers.

According to the present embodiment, the power supply wire VL may beconnected to the second electrode 183 without the separate laserdrilling process or the separate photo-process using the mask, so thatthe display apparatus capable of preventing or reducing the IR dropwhile reducing manufacturing costs, and having a simplified structuremay be provided.

In more detail, while forming the common layer CL and forming the secondelectrode 183, when a condition of an incident angle at which adeposition material is provided from an end of the third conductivelayer VL3 toward the side surface of the second conductive layer VL2 isappropriately adjusted, the second electrode 183 may be formed at aposition higher than a position of the common layer CL on the sidesurface of the second conductive layer VL2, so that the second electrode183 and the power supply wire VL may be electrically connected to eachother.

FIG. 5 is a cross-sectional view showing a display area of a displayapparatus according to one or more example embodiments.

The display apparatus shown in FIG. 5 is the same or substantially thesame as the display apparatus shown in FIGS. 1 to 4 , except that thepower supply wire VL is formed at (e.g., in or on) the same layer asthat of the gate electrode GE. Therefore, redundant descriptions thereofmay not be repeated.

Referring to FIG. 5 , the display apparatus may include a base substrate100, a lower blocking electrode BML, a first insulating layer 110, anactive pattern ACT, a gate insulating layer 120, a gate electrode GE, aninterlayer insulating layer 130, a source electrode SE, a drainelectrode DE, a power supply wire VL, a via insulating layer 140, apixel defining layer PDL, a light emitting structure 180, a common layerCL, and a thin film encapsulation layer TFE. The light emittingstructure 180 may include a first electrode 181, a light emitting layerEL, and a second electrode 183.

The interlayer insulating layer 130 and the via insulating layer 140 mayhave openings that expose the power supply wire VL to allow the powersupply wire VL to be electrically connected to the second electrode 183.

The power supply wire VL may include a first conductive layer VL1, asecond conductive layer VL2, and a third conductive layer VL3 (e.g., seeFIG. 3 ). The second electrode 183 may contact (e.g., directly contact)the side surface of the second conductive layer VL2 of the power supplywire VL.

FIG. 6 is a cross-sectional view showing a display area of a displayapparatus according to one or more example embodiments.

The display apparatus shown in FIG. 6 is the same or substantially thesame as the display apparatus shown in FIGS. 1 to 4 , except that thepower supply wire VL is formed at (e.g., in or on) the same layer asthat of the lower blocking electrode BML. Therefore, redundantdescriptions thereof may not be repeated.

Referring to FIG. 6 , the display apparatus may include a base substrate100, a lower blocking electrode BML, a first insulating layer 110, anactive pattern ACT, a gate insulating layer 120, a gate electrode GE, aninterlayer insulating layer 130, a source electrode SE, a drainelectrode DE, a power supply wire VL, a via insulating layer 140, apixel defining layer PDL, a light emitting structure 180, a common layerCL, and a thin film encapsulation layer TFE. The light emittingstructure 180 may include a first electrode 181, a light emitting layerEL, and a second electrode 183.

The first insulating layer 110, the interlayer insulating layer 130, andthe via insulating layer 140 may have openings that expose the powersupply wire VL to allow the power supply wire VL to be electricallyconnected to the second electrode 183.

The power supply wire VL may include a first conductive layer VL1, asecond conductive layer VL2, and a third conductive layer VL3 (e.g., seeFIG. 3 ). The second electrode 183 may contact (e.g., directly contact)the side surface of the second conductive layer VL2 of the power supplywire VL.

FIG. 7 is an enlarged view showing a power supply wire of a displayapparatus according to one or more example embodiments.

The display apparatus shown in FIG. 7 is the same or substantially thesame as the display apparatus shown in FIGS. 1 to 4 , except for a shapeof the second electrode 183 contacting (e.g., directly contacting) afirst side surface and a second side surface of the second conductivelayer VL2 of the power supply wire VL may be different. Therefore,redundant descriptions thereof may not be repeated.

Referring to FIG. 7 , the display apparatus may include a base substrate100, a lower blocking electrode BML, a first insulating layer 110, anactive pattern ACT, a gate insulating layer 120, a gate electrode GE, aninterlayer insulating layer 130, a source electrode SE, a drainelectrode DE, a power supply wire VL, a via insulating layer 140, apixel defining layer PDL, a light emitting structure 180, a common layerCL, a first cover part CLa, a second cover part 183 a, and a thin filmencapsulation layer TFE (e.g., see FIGS. 2 and 4-7 ). The light emittingstructure 180 may include a first electrode 181, a light emitting layerEL, and a second electrode 183 (e.g., see FIGS. 2 and 4-6 ).

The power supply wire VL may include a first conductive layer VL1, asecond conductive layer VL2, and a third conductive layer VL3. Thesecond conductive layer VL2 of the power supply wire VL may include afirst side surface (e.g., a right side of the second conductive layerVL2 in FIG. 7 ), and a second side surface (e.g., a left side of thesecond conductive layer VL2 in FIG. 7 ) opposite to the first sidesurface. A recessed part RS formed by an undercut may be formed at(e.g., in or on) the first side surface and the second side surface ofthe second conductive layer VL2.

When measured in a length direction crossing the width direction of thepower supply wire VL in a cross section extending through the first sidesurface and the second side surface, a contact length w1 between thesecond conductive layer VL2 and the second electrode 183 on the firstside surface of the second conductive layer VL2 may be greater than acontact length w2 between the second conductive layer VL2 and the secondelectrode 183 on the second side surface of the second conductive layerVL2. In other words, the contact length w1 of a portion of the secondelectrode 183 contacting the first side surface of the second conductivelayer VL2 may be greater than the contact length w2 of a portion of thesecond electrode 183 contacting the second side surface of the secondconductive layer VL2.

This may be achieved by supplying a deposition material in a directioninclined at a suitable angle (e.g., a predetermined angle) with respectto a direction perpendicular to or substantially perpendicular to thebase substrate 100 when the second electrode 183 is formed (e.g., seethe arrow in FIG. 7 ).

Accordingly, a contact area for electrically connecting the secondelectrode 183 to the power supply wire VL may be ensured on the firstside surface of the second conductive layer VL2.

FIG. 8 is a plan view showing a power supply wire in a display area of adisplay apparatus according to one or more example embodiments, and FIG.9 is a cross-sectional view taken along the line I-I′ in FIG. 8 .

The display apparatus shown in FIGS. 8 and 9 is the same orsubstantially the same as the display apparatus shown in FIGS. 1 to 4 ,except that the power supply wire VL further includes a contact partVLC. Therefore, redundant descriptions thereof may not be repeated.

The display apparatus may include a base substrate 100, a lower blockingelectrode BML, a first insulating layer 110, an active pattern ACT, agate insulating layer 120, a gate electrode GE, an interlayer insulatinglayer 130, a source electrode SE, a drain electrode DE, a power supplywire VL, a via insulating layer 140, a pixel defining layer PDL, a lightemitting structure 180, a common layer CL, a first cover part CLa, asecond cover part 183 a, and a thin film encapsulation layer TFE (e.g.,see FIGS. 2-7 ). The light emitting structure 180 may include a firstelectrode 181, a light emitting layer EL, and a second electrode 183(e.g., see FIGS. 2 and 4-6 ).

The power supply wire VL may include a first conductive layer VL1, asecond conductive layer VL2, and a third conductive layer VL3 (e.g., seeFIGS. 2-3 and 5-7 ).

The power supply wire VL may extend in a first direction Dl. The powersupply wire VL may include a contact part VLC protruding in a seconddirection D2 crossing (e.g., perpendicular to or substantiallyperpendicular to) the first direction D1. In other words, the contactpart VLC may have a semi-circular shape when viewed in a plane (e.g.,when viewed in a plan view), and may be formed on sides (e.g., bothsides or opposite sides) of the power supply wire VL in the seconddirection D2 to form a circular shape as a whole. However, the presentdisclosure is not limited thereto, and in some embodiments, the contactpart VLC may be formed only on one side of the power supply wire VL(e.g., in the second direction D2) to have the semi-circular shape.

In the contact part VLC, the second electrode 183 may contact (e.g., maydirectly contact) a side surface of the second conductive layer VL2. Thecontact part VLC may have a circular shape when viewed in a plan view.Accordingly, an area where the second electrode 183 is able to makecontact with the second conductive layer VL2 may be sufficientlyensured.

FIGS. 10A, 10B, 11A, 11B, 12, 13A, 13B, 14A, 14B, 15A, and 15B arecross-sectional views illustrating a method of manufacturing a displayapparatus according to one or more example embodiments.

In brief overview, a method of manufacturing a display apparatus mayinclude: sequentially forming a first conductive layer, a secondconductive layer, and a third conductive layer on a base substrate;forming a power supply wire by patterning the third conductive layer,the second conductive layer, and the first conductive layer; forming avia insulating layer on the base substrate on which the power supplywire is formed; forming a first electrode on the via insulating layer;forming a common layer on the base substrate on which the firstelectrode is formed; and forming a second electrode on the common layer.The third conductive layer of the power supply wire may protrude morethan a side surface of the second conductive layer to form an undercut.In the forming of the second electrode, the second electrode may contact(e.g., may directly contact) the side surface of the second conductivelayer.

In more detail, referring to FIGS. 10A and 10B, a lower blockingelectrode BML, a first insulating layer 110, an active pattern ACT, agate insulating layer 120, a gate electrode GE, and an interlayerinsulating layer 130 may be formed on the base substrate 100.

A preliminary conductive layer CON may be formed on the interlayerinsulating layer 130.

The preliminary conductive layer CON may include a first preliminaryconductive layer CON1, a second preliminary conductive layer CON2disposed on the first preliminary conductive layer CON1, and a thirdpreliminary conductive layer CON3 disposed on the second preliminaryconductive layer CON2.

Referring to FIGS. 11A and 11B, the preliminary conductive layer CON maybe patterned to form a source electrode SE, a drain electrode DE, and apower supply wire VL. The power supply wire VL may include a firstconductive layer VL1 formed from the first preliminary conductive layerCON1, a second conductive layer VL2 formed from the second preliminaryconductive layer CON2, and a third conductive layer VL3 formed from thethird preliminary conductive layer CON3.

In this case, for example, when the first conductive layer VL1 includestitanium, the second conductive layer VL2 includes aluminum, and thethird conductive layer VL3 includes titanium, during the forming of thepower supply wire VL, the first to third conductive layers VL1, VL2, andVL3 may be patterned through dry etching to form the undercut.Accordingly, a recessed part RS may be formed on a side surface of thepower supply wire VL. For example, the recessed part RS may be formed at(e.g., in or on) a side surface of the second conductive layer VL2, suchthat a width of the second conductive layer VL2 is less than widths ofthe first and third conductive layers VL1 and VL3.

However, the present disclosure is not limited thereto, and according toanother embodiment, for example, when the first conductive layer VL1includes titanium, the second conductive layer VL2 includes copper, andthe third conductive layer VL3 includes titanium, during the forming ofthe power supply wire VL, the first to third conductive layers may bepatterned through wet etching, and the undercut may be formed byselective etching of the second conductive layer VL2 to form therecessed part RS.

According to still another embodiment, for example, when the firstconductive layer VL1 includes titanium, the second conductive layer VL2includes aluminum, and the third conductive layer VL3 includes titanium,during the forming of the first electrode 181, which will be describedin more detail below, the first electrode may be patterned through wetetching, and the undercut may be formed by selective etching of thesecond conductive layer VL2.

Referring to FIG. 12 , a via insulating layer 140 having an opening thatexposes the power supply wire VL may be formed on the interlayerinsulating layer 130 on which the source electrode SE, the drainelectrode DE, and the power supply wire VL are formed. The firstelectrode 181 may be formed on the via insulating layer 140. A pixeldefining layer PDL may be formed on the via insulating layer 140 onwhich the first electrode 181 is formed.

Referring to FIGS. 13A and 13B, a common layer CL and a light emittinglayer EL may be formed on the base substrate 100 on which the pixeldefining layer PDL is formed.

The common layer CL may be formed over an entirety of (e.g., over thewhole) base substrate 100. The common layer CL may have a multilayeredstructure including a hole injection layer, a hole transport layer, anelectron transport layer, an electron injection layer, and/or the like.

Because the common layer CL is formed over the entirety of (e.g., overthe whole) base substrate 100, the common layer CL may be formed on atop surface of the third conductive layer VL3 of the power supply wireVL (e.g., see the first cover part CLa). Because the undercut is formedbetween the third conductive layer VL3 and the second conductive layerVL2 of the power supply wire VL, a portion of the side surface of thesecond conductive layer VL2 may be exposed without being covered by thefirst cover part CLa and the common layer CL (e.g., see OP).

Before forming the electron transport layer of the common layer CL, thelight emitting layer EL may be formed on the hole transport layer tooverlap with the first electrode 181.

Referring to FIGS. 14A and 14B, a second electrode 183 may be formed onthe common layer CL. The second electrode 183 may be formed over anentirety of (e.g., over the whole) base substrate 100. In other words,in some embodiments, the second electrode 183 may be formed by using anopen mask.

In this case, the second electrode 183 may contact (e.g., may directlycontact) the side surface of the second conductive layer VL2 of thepower supply wire VL. When the second electrode 183 is formed, thesecond electrode 183 may be formed through a process with a suitablestep coverage (e.g., with an excellent step coverage), so that adeposition material may be deposited on the undercut between the thirdconductive layer VL3 and the second conductive layer VL2 of the powersupply wire VL. Accordingly, a second cover part 183 a may be formed onthe first cover part CLa.

For example, the second electrode 183 may be formed by using an(thermal) atomic layer deposition (ALD) process and/or the like, and/ora general deposition process.

Referring to FIGS. 15A and 15B, a thin film encapsulation layer TFE maybe formed on the second electrode 183, so that the display apparatus maybe manufactured. In some embodiments, each component of the displayapparatus may be formed through various suitable processes as would beknown to those having ordinary skill in the arts.

FIG. 16 is a block diagram illustrating an electronic device accordingto one or more example embodiments, FIG. 17A is a diagram illustratingan example in which the electronic device of FIG. 16 is implemented as atelevision, and FIG. 17B is a diagram illustrating an example in whichthe electronic device of FIG. 16 is implemented as a smart phone.

Referring to FIGS. 16 to 17B, the electronic device 500 may include aprocessor 510, a memory device 520, a storage device 530, aninput/output (I/O) device 540, a power supply 550, and a displayapparatus 560. Here, the display apparatus 560 may be the displayapparatus shown in FIG. 1 . In addition, the electronic device 500 mayfurther include a plurality of ports for communicating with a videocard, a sound card, a memory card, a universal serial bus (USB) device,other electronic devices, and/or the like. In an embodiment, asillustrated in FIG. 17A, the electronic device 500 may be implemented asa television. In another embodiment, as illustrated in FIG. 17B, theelectronic device 500 may be implemented as a smart phone. However, thepresent disclosure is not limited thereto, and the electronic device 500may be implemented as any suitable device that uses or includes thedisplay apparatus 560. For example, the electronic device 500 may beimplemented as a cellular phone, a video phone, a smart pad, a smartwatch, a tablet PC, a car navigation system, a computer monitor, alaptop, a head mounted display (HMD) apparatus, and/or the like.

The processor 510 may perform various computing functions. The processor510 may be a microprocessor, a central processing unit (CPU), anapplication processor (AP), and/or the like. The processor 510 may beconnected to other components via an address bus, a control bus, a databus, and/or the like. Further, the processor 510 may be connected to anextended bus, for example, such as a peripheral componentinterconnection (PCI) bus. The memory device 520 may store data foroperations of the electronic device 500. For example, the memory device520 may include at least one non-volatile memory device, for example,such as an erasable programmable read-only memory (EPROM) device, anelectrically erasable programmable read-only memory (EEPROM) device, aflash memory device, a phase change random access memory (PRAM) device,a resistance random access memory (RRAM) device, a nano floating gatememory (NFGM) device, a polymer random access memory (PoRAM) device, amagnetic random access memory (MRAM) device, a ferroelectric randomaccess memory (FRAM) device, and/or the like, and/or at least onevolatile memory device, for example, such as a dynamic random accessmemory (DRAM) device, a static random access memory (SRAM) device, amobile DRAM device, and/or the like. The storage device 530 may includea solid state drive (SSD) device, a hard disk drive (HDD) device, aCD-ROM device, and/or the like. The I/O device 540 may include an inputdevice, for example, such as a keyboard, a keypad, a mouse device, atouch-pad, a touch-screen, and/or the like, and an output device, forexample, such as a printer, a speaker, and/or the like. The power supply550 may provide power for operations of the electronic device 500.

The display apparatus 560 may be connected to other components via thebuses and/or other communication links. In some embodiments, the I/Odevice 540 may include the display apparatus 560. As described above,the display apparatus 560 may include a base substrate, a thin filmtransistor and a power supply wire that are disposed on the basesubstrate, a first electrode disposed on the base substrate andelectrically connected to the thin film transistor, a light emittinglayer and a common layer that are disposed on the first electrode, and asecond electrode disposed on the common layer. The power supply wire mayinclude a first conductive layer, a second conductive layer disposed onthe first conductive layer, and a third conductive layer disposed on thesecond conductive layer. The third conductive layer may protrude morethan a side surface of the second conductive layer to form an undercut.The second electrode may contact (e.g., may directly contact) the sidesurface of the second conductive layer. Accordingly, in the displayapparatus 560, the power supply wire, which may be an auxiliary wire,may be connected to the second electrode without a separate laserdrilling process or a separate photo-process using a mask, so that thedisplay apparatus capable of preventing or reducing the IR drop whilereducing manufacturing costs, and having a simplified structure may beprovided. Because these aspects and features of the present disclosureare described above, redundant description will not be repeated.

Example embodiments of the present disclosure may be applied to adisplay apparatus and an electronic device including the displayapparatus. For example, one or more example embodiments of the presentdisclosure may be applied to a smart phone, a cellular phone, a videophone, a smart pad, a smart watch, a tablet PC, a car navigation system,a television, a computer monitor, a laptop, a head mounted displayapparatus, and/or the like.

The foregoing is illustrative of example embodiments and is not to beconstrued as limiting thereof. Although some example embodiments havebeen described, those skilled in the art will readily appreciate thatvarious modifications are possible in the example embodiments withoutmaterially departing from the spirit and scope of the presentdisclosure. Accordingly, all such modifications are intended to beincluded within the scope of the present disclosure as defined in theclaims, and their equivalents. Therefore, it is to be understood thatthe foregoing is illustrative of various example embodiments and is notto be construed as limited to the specific embodiments disclosed, andthat modifications to the disclosed embodiments, as well as otherembodiments, are intended to be included within the spirit and scope ofthe appended claims, and their equivalents.

What is claimed is:
 1. A method of manufacturing a display apparatus,the method comprising: sequentially forming a first conductive layer, asecond conductive layer, and a third conductive layer on a basesubstrate; forming a power supply wire by patterning the thirdconductive layer, the second conductive layer, and the first conductivelayer; forming a via insulating layer on the base substrate on which thepower supply wire is formed; forming a first electrode on the viainsulating layer; forming a common layer on the base substrate on whichthe first electrode is formed; and forming a second electrode on thecommon layer, wherein the third conductive layer protrudes more than thesecond conductive layer at a side surface of the power supply wire, andwherein, when the second electrode is formed, the second electrodecontacts a side surface of the second conductive layer.
 2. The method ofclaim 1, wherein the first conductive layer includes titanium, thesecond conductive layer includes aluminum, and the third conductivelayer includes titanium, and wherein, when the power supply wire isformed, the first to third conductive layers are patterned through dryetching to form an undercut.
 3. The method of claim 1, wherein the firstconductive layer includes titanium, the second conductive layer includesaluminum, and the third conductive layer includes titanium, and wherein,when the first electrode is formed, the first electrode is patternedthrough wet etching, and a portion of the second conductive layer isetched to form an undercut at side surfaces of the third conductivelayer and the second conductive layer.
 4. The method of claim 1, whereinthe first conductive layer includes titanium, the second conductivelayer includes copper, and the third conductive layer includes titanium,and wherein, when the power supply wire is formed, the first to thirdconductive layers are patterned through wet etching to form an undercutat side surfaces of the third conductive layer and the second conductivelayer.
 5. The method of claim 1, wherein, when the second electrode isformed, the second electrode is formed by depositing a conductivematerial in a direction inclined at an angle with respect to a directionperpendicular to the base substrate.
 6. The method of claim 1, whereinthe common layer contacts the side surface of the second conductivelayer.
 7. The method of claim 1, wherein the common layer comprises ahole injection layer, a hole transport layer, an electron transportlayer, and an electron injection layer, and wherein the method furthercomprises forming a light emitting layer on the hole transport layer tooverlap with the first electrode before forming the electron transportlayer of the common layer.